友善列印 - W T Chang, J A Lin(林建安),"Piezoresistive coefficients of <110> silicon-on-insulator MOSFETs with 0.135/0.45/10 micrometers channel length with external forces" , Microelectronic Engineering , Vol.86 , No.7-9 , pp1965-1968 ,2009, (SCI)

W T Chang, J A Lin(林建安),"Piezoresistive coefficients of <110> silicon-on-insulator MOSFETs with 0.135/0.45/10 micrometers channel length with external forces" , Microelectronic Engineering , Vol.86 , No.7-9 , pp1965-1968 ,2009, (SCI)

出版日期 2009-03-10
期刊等級 SCI
論文名稱(篇名) Piezoresistive coefficients of <110> silicon-on-insulator MOSFETs with 0.135/0.45/10 micrometers channel length with external forces
期刊名 Microelectronic Engineering
卷數 Vol.86
期數 No.7-9
起頁 1965
迄頁 1968
總頁數 4
作者中文名張文騰
作者英文名 Wen-Teng Chang
全部作者 W T Chang, J A Lin(林建安)
著作人數 2
作者型態 First Author / Corresponding Author
ISSN(ISBN) 0167-9317
參考網址 http://www.sciencedirect.com/science/article/pii/S0167931709001865
使用語言英文