出版日期:2018-02-00
期刊等級:SCI
論文名稱(篇名):A New Device-Parameter-Oriented DC Power Model for Symmetric Operation of Junctionless Double-Gate MOSFET Working on Low-Power CMOS Subthreshold Logic Gates
期刊名:IEEE Trans on Nanotechnology
卷數:17
期數:2
起頁:424
迄頁:431
總頁數:8
作者中文名:江德光
作者英文名:Te-Kung Chiang
全部作者:Hong-Wun Gao, Yeong-Her Wang and Te-Kuang Chiang
著作人數:3
作者型態:Corresponding Author