"A Novel Quasi-3D Interface-Trapped-Charge-Induced Threshold Voltage Model for Quadruple-Gate MOSFETs, Including Equivalent Number of Gates (ENG)”, IEEE Trans. on Electron Devices (TED)" , TED , vol. 61 , no. 5 , pp1615-1618 ,2014, (SCI)

  • 出版日期：2014-03-00
  • 期刊等級：SCI
  • 論文名稱(篇名)：A Novel Quasi-3D Interface-Trapped-Charge-Induced Threshold Voltage Model for Quadruple-Gate MOSFETs, Including Equivalent Number of Gates (ENG)”, IEEE Trans. on Electron Devices (TED)
  • 期刊名：TED
  • 卷數：vol. 61
  • 期數：no. 5
  • 起頁：1615
  • 迄頁：1618
  • 總頁數：4
  • 作者中文名：江德光
  • 作者英文名：Te-Kung Chiang
  • 全部作者：Chiang Te-Kuang
  • 著作人數：1
  • 作者型態：First Author