"A Compact Interface-Trapped-Charge-Induced Subthreshold Current Model for Surrounding-Gate (SRG) MOSFETs” IEEE Transactions on Device and Materials Reliability (TDMR)" , TDMR , vol. 14 , no. 2 , pp766-768 ,2014, (SCI)

  • 出版日期：2014-03-00
  • 期刊等級：SCI
  • 論文名稱(篇名)：A Compact Interface-Trapped-Charge-Induced Subthreshold Current Model for Surrounding-Gate (SRG) MOSFETs” IEEE Transactions on Device and Materials Reliability (TDMR)
  • 期刊名：TDMR
  • 卷數：vol. 14
  • 期數：no.2
  • 起頁：766
  • 迄頁：768
  • 總頁數：3
  • 作者中文名：江德光
  • 作者英文名：Te-Kung Chiang
  • 全部作者：Chiang Te-Kuang
  • 著作人數：1
  • 作者型態：First Author