"A Novel Scaling Theory for Fully Depleted, Multiple-Gate MOSFET, Including Effective Number of Gates (ENG)" , IEEE TRANSACTIONS ON ELECTRON DEVICES , vol. 61 , no. 2 , pp631-633 ,2014, (SCI)

  • 出版日期：2014-01-00
  • 期刊等級：SCI
  • 論文名稱(篇名)：A Novel Scaling Theory for Fully Depleted, Multiple-Gate MOSFET, Including Effective Number of Gates (ENG)
  • 期刊名：IEEE TRANSACTIONS ON ELECTRON DEVICES
  • 卷數：vol. 61
  • 期數：no.2
  • 起頁：631
  • 迄頁：633
  • 總頁數：3
  • 作者中文名：江德光
  • 作者英文名：Te-Kung Chiang
  • 全部作者：Chiang Te-Kuang
  • 著作人數：1
  • 作者型態：First Author / Corresponding Author