"A Novel Quasi-3-D Threshold Voltage Model for Fully Depleted Quadruple-Gate (FDQG) MOSFETs: With Equivalent Number of Gates (ENG) Included" , IEEE Trans. on Nanotechnology , vol. 12 , no. 6 , pp1022-1025 ,2013, (SCI)

  • 出版日期：2012-11-00
  • 期刊等級：SCI
  • 論文名稱(篇名)：A Novel Quasi-3-D Threshold Voltage Model for Fully Depleted Quadruple-Gate (FDQG) MOSFETs: With Equivalent Number of Gates (ENG) Included
  • 期刊名：IEEE Trans. on Nanotechnology
  • 卷數：vol. 12
  • 期數：no.6
  • 起頁：1022
  • 迄頁：1025
  • 總頁數：3
  • 作者中文名：江德光
  • 作者英文名：Te-Kung Chiang
  • 全部作者：T.K. Chiang
  • 著作人數：1
  • 作者型態：First Author / Corresponding Author