出版日期:2006-10-23
期刊等級:EI
論文名稱(篇名): A New Two-dimensional Analytical Model for Threshold Voltage Model in Undoped Surrounding-gate MOSFETs
期刊名:IEEE 8th International Conference on Solid-State and Integrated Circuits Technology
卷數:vol.2
作者中文名:江德光
作者英文名:Te-Kung Chiang
全部作者:T.K. Chiang
著作人數:1
作者型態:First Author / Corresponding Author
使用語言:英文