Print - "A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETs" , Semiconductor Science and Technology , vol.20 , no.11 , pp1173-1178 ,2005, (SCI)

"A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETs" , Semiconductor Science and Technology , vol.20 , no.11 , pp1173-1178 ,2005, (SCI)

出版日期：2005-11-00

期刊等級：SCI

論文名稱(篇名)： A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETs

期刊名：Semiconductor Science and Technology

卷數：vol.20

期數：no.11

起頁：1173

迄頁：1178

總頁數：6

作者中文名：江德光

作者英文名：Te-Kung Chiang

全部作者：T.K. Chiang

著作人數：1

作者型態：First Author / Corresponding Author

使用語言：英文