Print - "A New Scaling theory for fully-depleted SOI double-gate MOSFET’s: including effective conducting path effect (ECPE)" , Solid-State Electronics , vol.49 , no.3 , pp317-322 ,2005, (SCI)

"A New Scaling theory for fully-depleted SOI double-gate MOSFET’s: including effective conducting path effect (ECPE)" , Solid-State Electronics , vol.49 , no.3 , pp317-322 ,2005, (SCI)

出版日期：2005-03-00

期刊等級：SCI

論文名稱(篇名)： A New Scaling theory for fully-depleted SOI double-gate MOSFET’s: including effective conducting path effect (ECPE)

期刊名：Solid-State Electronics

卷數：vol.49

期數：no.3

起頁：317

迄頁：322

總頁數：6

作者中文名：江德光

作者英文名：Te-Kung Chiang

全部作者：T.K. Chiang

著作人數：1

作者型態：First Author / Corresponding Author

使用語言：英文