計畫名稱：能帶工程應用於p-Si/(Mg)ZnO:Er/n-ZnO二極體製作研究
執行起迄：2017/08/01~2018/07/31
總核定金額：935,000元
中文摘要：計畫研究在以鉺摻雜氧化鋅鎂為主動層的發光二極體結構中的鉺摻雜量，鎂含量以及結構對於元件特性的影響。在鉺摻雜氧化鋅二極體上，隨著鉺摻雜增加，二極體結構電阻降低，而反向偏壓電流呈現先減後增的情況。在不同鎂組成之鉺摻雜氧化鋅鎂二極體上，隨著鎂組成增加，二極體電阻呈現增加的情況。在適當的鉺摻雜以及鎂組成下，此鉺摻雜氧化鋅鎂有較高的光強度。過高的鎂含量會造成元件亮度下降以及反向偏壓電流增加的情況。在不同結構與組成的摻鉺氧化鋅鎂結構探討上，以降低價電帶不連續方式製作加強電洞撞擊之二極體元件，經由光性與電性等分析，此結構可有效降低順向偏壓的臨界電壓與增加二極體元件的亮度。
英文摘要：In this project, we study the fabrication and characterization of Er-doped MgZnO light emitting diode on p-Si substrate with different Er-content, Mg-content and structures. For the ZnO diode with the increasing Er content, the diode resistance decreases and the reverse biased current shows the decrease-increase behavior. For the Er doped MgZnO diode with different Mg content, the diode resistance increases with the increasing of Mg content. A relatively high light intensity can be achieved with suitable Er doping and Mg content. High Mg content in the Er-doped MgZnO film show the light intensity decreasing and high reverse bias current behaviors. The diode structure modification was proposed under the consideration of reduction the valance band discontinuity. With the optical and electrical investigation, the proposed structure may reduce the forward bias voltage and enhance the light intensity.