計畫名稱：具阻障層之鉺氮共摻雜氧化鋅鎂二極體研究
執行起迄：2018/08/01~2019/07/31
總核定金額：820,000元
中文摘要：計畫於p型矽基板上以噴霧熱解法製作以n型鉺、氮摻雜的氧化鋅鎂為主動層的p-n發光二極體，探討氮摻雜以及矽-鉺、氮摻雜的氧化鋅鎂之間的阻障層對於二極體的影響。在氮摻雜的研究上，隨著製程前驅物中氮含量的增加，製成鉺、氮摻雜的氧化鋅鎂薄膜中的n-型濃度呈現不均勻而於介面處累增情況。在適當氮摻雜情況下，可有效改善元件發光特性。在應用阻障層於此二極體結構的研究上，以矽氧化層為阻障層可有效抑制二極體元件於反向偏壓下的電流值，並改善此等二極體於低電流操作下的特性。
英文摘要：In this project, the p-n diode contained n-type MgZnO:Er,N active layer on p-Si substrate was fabricated by spray pyrolysis. The effect of nitrogen doping and barrier layers in the Si-MgZnO:Er,N interface were studied. With the increase of nitrogen content in precursor, the fabricated MgZnO:Er,N layer shows an un-uniformed n-type concentration distribution and the carrier concentration enhanced near the interface was characterized. With suitable nitrogen doping, the improved luminescence was characterized and the origin was discussed. The barrier layer structure was then applied to the diodes. The SiO2 barrier layer shows an effective method to inhibit reverse bias current in the diode structure. The improved low injection current of the diode was characterized and discussed.