計畫名稱：提升熱輻射吸收共振腔製作
執行起迄：2014/08/01~2015/08/31
總核定金額：715,000元
中文摘要：本計畫以聚亞醯胺作為犧牲層，以非晶矽和氮化矽堆疊為結構層製作熱輻射膜，將犧牲層設計為1/4倍遠紅外線波長，並於底部鍍反射膜，以達到遠紅外光共振效果，增加熱吸收效果，熱輻射器經蝕刻釋放集熱膜後，共振腔沒發現殘留；集熱膜具共面特徵；無彎曲變形。量測非晶矽藉由底部加熱量測溫度電阻系數可達到約負3%，且具也良好線性結果。以濾光片施加紅外線與(不同可見光+紅外線)也呈現照度與電阻變化關係。設計的讀取電路，可將電阻變化範圍做成可調節並放大，將類比訊號轉為數位訊號。驗證可達成經由不同紅外線光強度照射與外部熱輻射，均能以數位表示其灰階的輸出。
英文摘要：This project uses polyimide as sacrificial layer; stacked amorphous silicon (a-Si) and silicon nitride as structural layers for the thermal absorber layer. The thickness of sacrificial layer is about one quarter (~2.5 μm) of far infrared wavelength. The reflective film underneath polyimide was deposited to increase the resonance of incident far infrared rays, thus to enhance thermal absorption. The released microbolometer is residue free and the stacked absorbing film is well co-planar, and buckle-free. The temperature coefficient of resistance is about -3% via heating on substrate with well linearity. The filtered far infrared and visible wave radiation have been applied to test the device with a customized circuit board, with modulated resistance and analog-to-digital converter with different intensities. Both far infrared radiation and thermal radiation on the stacked a-Si are successfully to generate digital output.