計畫名稱：應變工程與通道方向對鰭式電晶體影響
執行起迄：2015/08/01~2016/07/31
總核定金額：658,000元
中文摘要：鰭式電晶體是目前業界量產的先進電晶體結構的主流與趨勢，具有高效能與低耗電特性，改善傳統平面式電晶體短通道效應，並使電路可以較低的工作電壓運作。本研究計畫在國研院奈米元件實驗室製作鰭式電晶體，使用(100)晶圓，討論<110>與旋轉45o 的<100>通道方向的電性與可靠度比較；並以人為施加外應力討論應變工程於鰭式場效電晶體效能的提升/衰減。結果顯示<110>比<100>通道在相同鰭寬下的驅動電流較大，但<110>比<100>通道的正偏壓溫度不穩定的電性衰退明顯，應為<110>與<100>的切面原子密度相關。另外<100>比<100>通道的伸張應力較有明顯的正電導(壓阻)變化區分，但壓縮應力則較無明顯的負電導(壓阻)區分，結果符合矽材料的壓阻係數。實驗結果建議鰭式電晶體應可用伸張應力增加其n型鰭式電晶體的電流驅動能力。
英文摘要：Fin field-effect transistors (FinFETs) are the mainstreams of current advanced transistors. FinFETs possess low energy-consumption and improve short channel effect that obsesses shrinking planar FETs. The fabricated nFinFETs at National Nano Device Laboratories (NDL), compared electrical characterization, reliability of <110> and <100> channel orientation on (100) a wafer. External stresses were also applied on both channels to validate the driving current of strain engineering. Results indicate the <110> channel has a better driving capability but more degradation under positive bias temperature instability than <100> channel, probably due to the atom density alone channel orientation. The <100> channel exhibits a higher positive transconductance (piezoresistance coefficient) change than the <110> channel under tensilely mechanical stresses. On the contrary, a negative transconductance change for both <100> and <110> channels but less significant under compressively mechanical stresses. This result suggests that tensile stress is applicable to enhance electron mobility on nFinFETs.