計畫名稱：真空通道與石墨烯通道電晶體
執行起迄：2017/08/01~2019/10/31
總核定金額：1,729,000元
中文摘要：電晶體通道距離若小於周圍環境中的電子碰撞平均自由半徑，則空氣通道電晶體可以表現出彈道傳輸且免受載流子散射的影響。本研究探討了金屬作為場發射的空氣通道電晶體，設計電晶體具有不同空氣通道距離，且閘極與射極、集極具共面。結果顯示，元件可以表現出場增強特性，但最終會隨著閘極電位的增加而降低，因為共面閘極吸引並攔截一部分電子電流。而對稱閘極間的距離決定了電子發射的攔截。這些元件可用作真空電晶體的反向器的使用。
英文摘要：Air-channel transistors can exhibit ballistic transport and immunity from carrier scattering if the channel distance is smaller than the mean free path of electrons in ambient environment. This study explored metal-based air-channel transistors with coplanar gates for different air-channel distances. Results indicate that the devices can exhibit field-enhanced features but will eventually be field-lowered with increasing gate potential because the coplanar gates attract and intercept a portion of electron emission. Air-channel distance determines device conductivity with or without gate electric field, whereas gate-to-gate distance determines the interception of electron emission. These devices may be utilized as inverters for vacuum transistors.