友善列印 - “An analytical model for merged GaN heterojunction barrier schottky diodes with inserting P-Si Technology” Superlattics and microstructures Vol. 10, No. 4, pp. 1043-1051, 2020.

“An analytical model for merged GaN heterojunction barrier schottky diodes with inserting P-Si Technology” Superlattics and microstructures Vol. 10, No. 4, pp. 1043-1051, 2020.

Wei Wang, Xiao-Xi Li, Zhi-Qiang Xiao, Wei Huang, Zhi-Gang Ji, T.K. Chiang, David Wei Zhang, Hong-Liang Lu “An analytical model for merged GaN heterojunction barrier schottky diodes with inserting P-Si Technology” Superlattics and microstructures Vol. 10, No. 4, pp. 1043-1051, 2020.