友善列印 - “Width-Induced Hump Effect and Electrical Stress Impact in N-Type Junctionless Gate-All-Around Transistors,” IEEE Transactions on Electron Devices, 72, 7, 3394

“Width-Induced Hump Effect and Electrical Stress Impact in N-Type Junctionless Gate-All-Around Transistors,” IEEE Transactions on Electron Devices, 72, 7, 3394 - 3399, 2025. (SCI)

Wen-Teng Chang, Hung-Hsi Chen (陳泓熙), Hung-Hsi Chen(郭俊廷),
Ching-Lun Wang(王靖侖), Chun-Ting Kuo(郭俊廷) , Yueh-Ting Ho(何岳廷) and
Jen-Chien Li(李任健), “Width-Induced Hump Effect and Electrical Stress
Impact in N-Type Junctionless Gate-All-Around Transistors,” IEEE
Transactions on Electron Devices, 72, 7, 3394 - 3399, 2025. (SCI)