"Surface Morphology and Photoluminescence for InAs Quantum Dots of Different Growth Temperature and Capping Layer",Indium Phosphide and Related materials (IPRM’06),Princeton, USA,2006/05/00 (EI)
年度：2006
論文類型：會議論文 / 壁報論文
論文等級：EI
論文名稱(篇名)：Surface Morphology and Photoluminescence for InAs Quantum Dots of Different Growth Temperature and Capping Layer
會議名稱：Indium Phosphide and Related materials (IPRM’06)
會議開始時間：2006-05-00
會議結束時間：2006-05-00
作者中文名：馮瑞陽
作者英文名：(David) Jui-Yang, Feng
全部作者：T. E. Tzeng, David J. Feng, C. Y. Chen, T. S. Lay, and T. Y. Chang
