105學年度：以超流體技術輔以場驅載子調控技術開發矽及三五族材料之高縱橫比蝕刻技術
計畫名稱：以超流體技術輔以場驅載子調控技術開發矽及三五族材料之高縱橫比蝕刻技術
執行起迄：2016/08/01~2017/10/31
總核定金額：1,272,000元
中文摘要：高縱橫比結構於光電半導體元件之設計與製作上，所扮演的角色愈趨重要，金屬輔助化學蝕刻技術，因進入門檻低且具深蝕刻潛力，同時又能避免傳統乾式電漿反應蝕刻因離子轟擊，造成材料產生原子級之表面劣化，極具發展潛力，近年來頗受重視。 矽基材料，利用金屬輔助化學蝕刻技術，輔以偏壓電洞調控技術，已具準直微米級矽穿孔能力(孔徑 ~ 30微米)，奈米柱之深寬比亦可達200左右。但若要進一步將穿孔能力進階至次微米級甚至奈米等級，亦或欲將奈米柱之深寬比更向上提升，將遭遇濕蝕刻技術先天上能力之限制。簡單來說，奈米級高深寬比蝕刻過程，隨著蝕刻時間的增加，蝕刻渠道越長，就如同一根細長的水管，造成交換新鮮蝕刻液與反應生成物之效率驟減，導致質量轉移困難。此一瓶頸，類似發展「磊晶層剝離技術」所遭遇的困難，人們發現其蝕刻效率主要是受擴散速度限制，而不是反應速度限制。換句話說，反應生成物之溶解度及離開蝕刻渠道之速度，乃影響蝕刻速率快慢之主要因素。 本研究預期引入超流體具極低黏滯力、極高擴散速率及幾乎為零之表面張力等特點，輔以場驅載子調控技術，來突破當前金屬輔助化學蝕刻技術之濕蝕刻限制，讓此技術能將材料蝕刻的更快、更直、更深，且不會塌陷與沾黏。 本研究完成一內腔及上蓋以鐵氟龍包覆保護之高壓腔體之細部設計與建置，輔以耐壓抗腐高分子管路與閥件，作為超流體下發展金屬輔助化學蝕刻技術之關鍵設備，以求突破當前研究限制，獲得研究進展。另外，電壓調控金屬輔助蝕刻之相關結果，將替本研究後續相關研究提供重要參考。
英文摘要：Nowadays, high aspect-ratio structures play a key role in design of photonic devices. Considering metal-assisted chemical etching (MacEtch) has potential to produce deep etch with low entry barrier and can also avoid material atomic-level surface deterioration caused by dry plasma-reactive etch and ion bombardment; therefore, people pay lots attention on its vision. Introducing electric bias-attenuated method for modulating injection hole during etching Si-based material by MacEtch technology, collimated TSV hole with an aperture ~ 30 micron has been achieved. Furthermore, the aspect ratio (AR) of the nanopillars has been pushed to ~ 200 or so. However, it is soon going to face its native limitation of wet etching if we further intend to reach a TSV hole with an aperture size in sub-micron level or even in nanometer as well as pushing a nano-pilliar can reach a higher AR (>200). In simple, a high AR etching process with a nano-scale aperture, as time passing, the channel is going to deeper. It is just like it is going to produce a getting longer and side-blocked pipe, which will result in decreasing exchange efficiency between the fresh etchant and the reaction byproduct and lead to more difficult to transfer mass. This bottleneck similar to which people ever faced when developing epitaxial lift-off technology, its etch rate is mainly dominant by diffusion-limited instead of reaction-rate-limited. Based on those urgent features in supercritical fluids (SCFs), ultra low viscosities, high diffusivities and almost zero surface tension which can break through the mentioned bottleneck existed in MacEtch; in this study, we expect by further introducing field-driven carrier modulation method within SCFs to make MacEtch process can etch structure in a higher speed, more straight, deeper and less happening collapse and sticking for Si and III-V materials. Besides, a high pressure vessel protected by an embedded PTFE inset and cap cover has been carefully designed and built up. Moreover, highly chemical corrosion-resistant ploymer tubes and valves were also installed to make the system ready for operating HF and H2O2 for developing MacEtch under scCO2. In addition, the onhand related results of aqueous MacEtch by electric bias-attenuated method will benefit us in moving the study into HF/H2O2/scCO2 condtions.
執行起迄：2016/08/01~2017/10/31
總核定金額：1,272,000元
中文摘要：高縱橫比結構於光電半導體元件之設計與製作上，所扮演的角色愈趨重要，金屬輔助化學蝕刻技術，因進入門檻低且具深蝕刻潛力，同時又能避免傳統乾式電漿反應蝕刻因離子轟擊，造成材料產生原子級之表面劣化，極具發展潛力，近年來頗受重視。 矽基材料，利用金屬輔助化學蝕刻技術，輔以偏壓電洞調控技術，已具準直微米級矽穿孔能力(孔徑 ~ 30微米)，奈米柱之深寬比亦可達200左右。但若要進一步將穿孔能力進階至次微米級甚至奈米等級，亦或欲將奈米柱之深寬比更向上提升，將遭遇濕蝕刻技術先天上能力之限制。簡單來說，奈米級高深寬比蝕刻過程，隨著蝕刻時間的增加，蝕刻渠道越長，就如同一根細長的水管，造成交換新鮮蝕刻液與反應生成物之效率驟減，導致質量轉移困難。此一瓶頸，類似發展「磊晶層剝離技術」所遭遇的困難，人們發現其蝕刻效率主要是受擴散速度限制，而不是反應速度限制。換句話說，反應生成物之溶解度及離開蝕刻渠道之速度，乃影響蝕刻速率快慢之主要因素。 本研究預期引入超流體具極低黏滯力、極高擴散速率及幾乎為零之表面張力等特點，輔以場驅載子調控技術，來突破當前金屬輔助化學蝕刻技術之濕蝕刻限制，讓此技術能將材料蝕刻的更快、更直、更深，且不會塌陷與沾黏。 本研究完成一內腔及上蓋以鐵氟龍包覆保護之高壓腔體之細部設計與建置，輔以耐壓抗腐高分子管路與閥件，作為超流體下發展金屬輔助化學蝕刻技術之關鍵設備，以求突破當前研究限制，獲得研究進展。另外，電壓調控金屬輔助蝕刻之相關結果，將替本研究後續相關研究提供重要參考。
英文摘要：Nowadays, high aspect-ratio structures play a key role in design of photonic devices. Considering metal-assisted chemical etching (MacEtch) has potential to produce deep etch with low entry barrier and can also avoid material atomic-level surface deterioration caused by dry plasma-reactive etch and ion bombardment; therefore, people pay lots attention on its vision. Introducing electric bias-attenuated method for modulating injection hole during etching Si-based material by MacEtch technology, collimated TSV hole with an aperture ~ 30 micron has been achieved. Furthermore, the aspect ratio (AR) of the nanopillars has been pushed to ~ 200 or so. However, it is soon going to face its native limitation of wet etching if we further intend to reach a TSV hole with an aperture size in sub-micron level or even in nanometer as well as pushing a nano-pilliar can reach a higher AR (>200). In simple, a high AR etching process with a nano-scale aperture, as time passing, the channel is going to deeper. It is just like it is going to produce a getting longer and side-blocked pipe, which will result in decreasing exchange efficiency between the fresh etchant and the reaction byproduct and lead to more difficult to transfer mass. This bottleneck similar to which people ever faced when developing epitaxial lift-off technology, its etch rate is mainly dominant by diffusion-limited instead of reaction-rate-limited. Based on those urgent features in supercritical fluids (SCFs), ultra low viscosities, high diffusivities and almost zero surface tension which can break through the mentioned bottleneck existed in MacEtch; in this study, we expect by further introducing field-driven carrier modulation method within SCFs to make MacEtch process can etch structure in a higher speed, more straight, deeper and less happening collapse and sticking for Si and III-V materials. Besides, a high pressure vessel protected by an embedded PTFE inset and cap cover has been carefully designed and built up. Moreover, highly chemical corrosion-resistant ploymer tubes and valves were also installed to make the system ready for operating HF and H2O2 for developing MacEtch under scCO2. In addition, the onhand related results of aqueous MacEtch by electric bias-attenuated method will benefit us in moving the study into HF/H2O2/scCO2 condtions.
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