101學年度：以超臨界二氧化碳流體技術開發全尺寸三五族高效率薄膜太陽能電池之磊晶層剝離技術
計畫名稱：以超臨界二氧化碳流體技術開發全尺寸三五族高效率薄膜太陽能電池之磊晶層剝離技術
執行起迄：2012/08/01~2013/07/31
總核定金額：803,000元
中文摘要：檢視高效率三五族化合物薄膜太陽能電池之成本架構，約有40%的成本來至於昂貴的基板支出(GaAs or Ge)，此乃其價格居高不下的主要因素。根據「美國能源部科學局」2011年2月之技術提點報告，發展有效可靠「磊晶層剝離技術」 (epitaxial lift-off, ELO) ，乃使其生產成本降低之重要途徑，其重要性不言而喻。 事實上，砷化鎵太陽能電池「磊晶層剝離技術」之發展已超過30年，但受限於AlAs犧牲層過薄(~100nm)，蝕刻水溶液進不去(aqueous HF)，反應物出不來(e.g. H2 gas)，加上水溶液表面張力之阻礙，諸多連鎖不利的因素，造成其蝕刻剝離效率過低，故此技術遲遲未有重大進展。 為求突破，針對「蝕刻液之表面張力是否可調整」一題深入研究，發現超臨界流體具有極低的黏滯力、極高的擴散速率及幾乎為零的表面張力等特點。證據顯示，以超臨界二氧化碳流體(scCO2)技術攜帶氫氟酸(HF mixed in scCO2)，相較於 HF蝕刻水溶液，僅需其10%的濃度，便可使得SiO2犧牲層之蝕刻效率快上10倍以上，證明超臨界流體技術確實在細微結構之蝕刻製程上，具有優異的表現，此乃申請者提出本計劃之關鍵因素。 本計劃希望利用超臨界流體之特殊優勢，以發展「超臨界流體蝕刻技術」為切入點，來突破「磊晶層剝離技術」之限制，並將其導入全晶圓ELO技術之開發。
英文摘要：Considering the expansive substrate (GaAs or Ge) still occupy ~ 40% productive cost for high efficiency III-V thin-film solar cell, we know that is the main reason why it is still not available to become popular one. According to the 2011 potential technology report from “Science for Energy” by the office of science, department of energy, USA, it highlighted that developing epitaxial lift-off (ELO) technology will become the most important way to have a breakthrough for developing low-price high efficiency solar cell. In fact, the ELO technology for GaAs solar cell has been developed over 30 years, why is it still no significant progress? The key reason is the thickness of AlAs sacrifice layer is too thin (~100nm) to become the bottleneck for efficiently “drinking in” aqueous HF and “pushing out” the reaction products (e.g. H2 gas). On the other hand, the ELO etching rate will be slow down by the surface tension of solutions; hence, the ELO process still face a huge challenge on enhancing chemical reactive efficiency to have a significant improvement. By understanding those unique characteristics of low viscosities, high diffusivities and near zero surface tension from supercritical fluids (SCFs), I expect it will bring an innovation for developing ELO process. The evidence shown that HF mixed in supercritical CO2 (scCO2-HF) with only 1/10 concentration, in comparing to aqueous HF solution, can reach a 10 times higher etching rate for removing SiO2 sacrifice layer. It demonstrated SCFs technology bring specific advantages in improving etching rate. That is also the key point to present this proposal. This proposal aims to develop a unique etching process based on SCFs technology to break through the long-term limitations of ELO process and to introduce it into developing full-size wafer ELO technology.
執行起迄：2012/08/01~2013/07/31
總核定金額：803,000元
中文摘要：檢視高效率三五族化合物薄膜太陽能電池之成本架構，約有40%的成本來至於昂貴的基板支出(GaAs or Ge)，此乃其價格居高不下的主要因素。根據「美國能源部科學局」2011年2月之技術提點報告，發展有效可靠「磊晶層剝離技術」 (epitaxial lift-off, ELO) ，乃使其生產成本降低之重要途徑，其重要性不言而喻。 事實上，砷化鎵太陽能電池「磊晶層剝離技術」之發展已超過30年，但受限於AlAs犧牲層過薄(~100nm)，蝕刻水溶液進不去(aqueous HF)，反應物出不來(e.g. H2 gas)，加上水溶液表面張力之阻礙，諸多連鎖不利的因素，造成其蝕刻剝離效率過低，故此技術遲遲未有重大進展。 為求突破，針對「蝕刻液之表面張力是否可調整」一題深入研究，發現超臨界流體具有極低的黏滯力、極高的擴散速率及幾乎為零的表面張力等特點。證據顯示，以超臨界二氧化碳流體(scCO2)技術攜帶氫氟酸(HF mixed in scCO2)，相較於 HF蝕刻水溶液，僅需其10%的濃度，便可使得SiO2犧牲層之蝕刻效率快上10倍以上，證明超臨界流體技術確實在細微結構之蝕刻製程上，具有優異的表現，此乃申請者提出本計劃之關鍵因素。 本計劃希望利用超臨界流體之特殊優勢，以發展「超臨界流體蝕刻技術」為切入點，來突破「磊晶層剝離技術」之限制，並將其導入全晶圓ELO技術之開發。
英文摘要：Considering the expansive substrate (GaAs or Ge) still occupy ~ 40% productive cost for high efficiency III-V thin-film solar cell, we know that is the main reason why it is still not available to become popular one. According to the 2011 potential technology report from “Science for Energy” by the office of science, department of energy, USA, it highlighted that developing epitaxial lift-off (ELO) technology will become the most important way to have a breakthrough for developing low-price high efficiency solar cell. In fact, the ELO technology for GaAs solar cell has been developed over 30 years, why is it still no significant progress? The key reason is the thickness of AlAs sacrifice layer is too thin (~100nm) to become the bottleneck for efficiently “drinking in” aqueous HF and “pushing out” the reaction products (e.g. H2 gas). On the other hand, the ELO etching rate will be slow down by the surface tension of solutions; hence, the ELO process still face a huge challenge on enhancing chemical reactive efficiency to have a significant improvement. By understanding those unique characteristics of low viscosities, high diffusivities and near zero surface tension from supercritical fluids (SCFs), I expect it will bring an innovation for developing ELO process. The evidence shown that HF mixed in supercritical CO2 (scCO2-HF) with only 1/10 concentration, in comparing to aqueous HF solution, can reach a 10 times higher etching rate for removing SiO2 sacrifice layer. It demonstrated SCFs technology bring specific advantages in improving etching rate. That is also the key point to present this proposal. This proposal aims to develop a unique etching process based on SCFs technology to break through the long-term limitations of ELO process and to introduce it into developing full-size wafer ELO technology.
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