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張文騰/期刊論文
Wen-Teng Chang, Tsung-Lun Tsou(鄒宗倫), Tzu Hao, Lin(林子豪), “Effect of Stacked Work Function Metals on Gate Stress Reliability of N- and P-FinFETs,” IEEE Transactions on Electron Devices, 70, 8, 4062 - 4066, 2023. (SCI)
Wen-Teng Chang, Tsung-Lun Tsou, Tzu Hao, Lin, “Effect of Stacked Work Function Metals on Gate Stress Reliability of N- and P-FinFETs,” IEEE Transactions on Electron Devices, 70, 8, 4062 - 4066, 2023. (SCI)
Wen-Teng Chang* , Cheng-Ting Kuo(郭政霆), Ting-He Shen(沈庭禾), Hung-Shiu Lin(林泓旭), And Yu-Ting Su(蘇榆婷), “Triboelectric energy generation for modulating the intermodulation of quartz oscillators in a
Wen-Teng Chang*, Meng-His Li(李孟禧), Chun-Hao Hsu(許竣皓), Wen-Chin Lin and Wen-Kuan Yeh,"Modifying threshold voltages to n- and p- type FinFETs by work function metal stacks," IEEE Open Journa
"Metal-Based Asymmetric Field Emission Diodes Operated in the Air"
Wen-Teng Chang, Ming-Chih Cheng, Tsung-Ying Chuang, Ming-Yen Tsai,"Field Emission Air-channel Devices as a Voltage Adder",Nanomaterials,vol 2378,
Wen-Teng Chang, Hsu-Jung Hsu(許祖榮), Po-Heng Pao(鮑柏亨),"Vertical Field Emission Air-Channel Diodes and Transistors" , Micromachines , 10 , 12 , pp858-1-858-12 ,2019, (SCI)
Wen-Teng Chang, Po-Heng Pao (鮑柏亨),"Field Electrons Intercepted by Coplanar Gates in Nanoscale Air Channel" , IEEE Transactions on Electron Devices , 66 , 9 , pp3961-3966 ,2019, (SCI)
Wen-Teng Chang, Shih-Wei Lin (林士瑋), Min-Cheng Chen, Wen-Kuan Yeh,,"Relationship of channel and surface orientation to mechanical and electrical stresses on n-type FinFETs" , IEICE Transactions on Electronics , E102-C , 6 , 2019, (SCI)
Wen-Teng Chang; "Back-biasing to Performance and Reliability Evaluation of UTBB FDSOI, Bulk FinFETs, and SOI FinFETs" , IEEE Transactions on Nanotechnology , 17 , 1 , pp36-40 ,2018, (SCI)
Wen-Teng Chang, Yu-Seng Lin(林育生), Cheng-Ting Shih(施政廷),"Threshold Voltage and Transconductance Shifting Reliance on Strained-SiGe Channel Dimension" , Solid State Electronics , 110 , XX , pp10-13 ,2015, (SCI)
Wen-Teng Chang, Yi Liang (梁毅) ,"Geometric Design of Microbolometers Made from CMOS Polycrystalline Silicon" , IEEE Sensors Journal , 15 , 1 , pp264-268 ,2015, (SCI)
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