"The Observation of Width Quantization Impact on Device Performance and Reliability for High-k/Metal Tri-Gate FinFET" , IEEE Transaction on Device and Materials Reliability , 16 , 4 , pp610-616 ,2016, (SCI)

出版日期：2016-09-00

期刊等級：SCI

論文名稱(篇名)：The Observation of Width Quantization Impact on Device Performance and Reliability for High-k/Metal Tri-Gate FinFET

期刊名：IEEE Transaction on Device and Materials Reliability

卷數：16

期數：4

起頁：610

迄頁：616

總頁數：7

作者中文名：葉文冠

作者英文名： Wen-Kuan Yeh

全部作者：Wen-Kuan Yeh, Wenqi Zhang, Yi-Lin Yang, An-Ni Dai(戴安妮), Kehuey Wu, Tung-Huan Chou, Cheng-Li Lin, Kwang-Jow Gan, Chia-Hung Shih and Po-Ying Chen

著作人數：10

作者型態：First Author

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