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"The Impact of Oxide Traps Induced by SOI Thickness on Reliability of Fully Silicide Metal-Gate Strained SOI MOSFET" , IEEE Electron Device Letters , 31 , 2 , pp165-167 ,2010, (SCI),(EI)
"Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing" , Microelectronics Reliability , 50 , 5 , pp618-621 ,2010, (SCI)
"Impact of Strain on Hot Electron Reliability of Dual-Band Power Amplifier and Integrated LNA-Mixer RF Performances" , Microelectronics Reliability , 50 , 6 , pp807-812 ,2010, (SCI)
"External Stresses on Tensile and Compressive Contact Etching Stop Layer SOI MOSFETs" , IEEE Transactions on Electron Devices , 57 , 8 , pp1889-1894 ,2010, (SCI),(EI)
"Relationship between wafer fracture reduction and controlling during the edge manufacturing process" , Microelectronic Engineering , 87 , 10 , pp1809-1815 ,2010, (SCI)
"Voltage-Controlled Multiple-Valued Logic Design Using Negative Differential Resistance Devices" , Solid-State Electronics , 54 , 12 , pp1637-1640 ,2010, (SCI)
"Effect of Nitrogen Incorporation in a Gd Cap Layer on the Reliability of Deep-Submicrometer Hf-Based High-k/Metal-Gate nMOSFETs" , IEEE Electron Device Letters , 30 , 7 , pp781-783 ,2009, (SCI),(EI)
"The Impact of Strain Technology on FUSI Gate SOI CMOSFET" , IEEE Transactions on Device and Materials Reliability , 9 , 1 , pp74-79 ,2009, (SCI),(EI)
"Significantly improving sub-90 nm CMOSFET performances with notch-gate enhanced high tensile-stress contact etch stop layer" , Microelectronics Reliability , 48 , 11-12 , pp1791-1794 ,2008, (SCI),(其他)
"Elucidating the Effects of Current Stress History on Reliability Characteristics by Dynamic Analysis" , Japanese Journal of Applied Physics , 47 , 10 , pp7836-7838 ,2008, (SCI)
"Elucidating the Effects of Current Stress History on Reliability Characteristics by Dynamic Analysis" , Japanese Journal of Applied Physics , 47 , 10 , pp7836-7838 ,2008, (SCI)-538
"Elucidating the Effects of Current Stress History on Reliability Characteristics by Dynamic Analysis" , Japanese Journal of Applied Physics , 47 , 10 , pp7836-7838 ,2008, (SCI)-555
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