"Impact of Fin Width and Back Bias Under Hot Carrier Injection on Double-Gate FinFETs" , IEEE Transaction on Device and Materials Reliability , 12 , 3 , pp1-4 ,2015, (SCI)
出版日期：2015-06-00
期刊等級：SCI
論文名稱(篇名)：Impact of Fin Width and Back Bias Under Hot Carrier Injection on Double-Gate FinFETs
期刊名：IEEE Transaction on Device and Materials Reliability
