"Reliability of the Doping Concentration in an Ultra-thin Body and Buried Oxide Silicon on Insulator (SOI) and Comparison with a Partially Depleted SOI" , Microelectronics Reliability , 54 , 2 , pp485-489 ,2014, (SCI)
出版日期：2014-07-00
期刊等級：SCI
論文名稱(篇名)：Reliability of the Doping Concentration in an Ultra-thin Body and Buried Oxide Silicon on Insulator (SOI) and Comparison with a Partially Depleted SOI
