"The Improvement of High-k/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure" , IEEE Transactions on Device and Materials Reliability , 11 , 1 , pp7-12 ,2011, (SCI),(EI)

出版日期：2011-03-00

期刊等級：SCI / EI

論文名稱(篇名)：The Improvement of High-k/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure

期刊名：IEEE Transactions on Device and Materials Reliability

卷數：11

期數：1

起頁：7

迄頁：12

作者中文名：葉文冠

作者英文名：Wen-Kuan Yeh

全部作者： Wen-Kuan Yeh, Yu-Ting Chen, Fon-Shan Huang, Chia-Wei Hsu, Chun-Yu Chen, Yean-Kuen Fang, Kwang-Jow Gan, and Po-Ying Chen

著作人數：8

作者型態：First Author

使用語言：英文

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