W. T. Chang,"Reliability of the Doping Concentration in an Ultra-thin Body and Buried Oxide Silicon on Insulator (SOI) and Comparison with a Partially Depleted SOI" , Microelectronics Reliability , 54 , 2 , pp485-489 ,2014, (SCI)
出版日期 2014-02-00
期刊等級 SCI
論文名稱(篇名) Reliability of the Doping Concentration in an Ultra-thin Body and Buried Oxide Silicon on Insulator (SOI) and Comparison with a Partially Depleted SOI
期刊名 Microelectronics Reliability
卷數 54
期數 2
起頁 485
迄頁 489
總頁數 5
作者中文名 張文騰
作者英文名 Wen-Teng Chang
全部作者 W. T. Chang, C. M. Lai(賴俊銘) , W. K. Yeh
著作人數 3
作者型態 First Author / Corresponding Author
期刊等級 SCI
論文名稱(篇名) Reliability of the Doping Concentration in an Ultra-thin Body and Buried Oxide Silicon on Insulator (SOI) and Comparison with a Partially Depleted SOI
期刊名 Microelectronics Reliability
卷數 54
期數 2
起頁 485
迄頁 489
總頁數 5
作者中文名 張文騰
作者英文名 Wen-Teng Chang
全部作者 W. T. Chang, C. M. Lai(賴俊銘) , W. K. Yeh
著作人數 3
作者型態 First Author / Corresponding Author
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