<li><span style="color:#0000ff;">出版日期</span>：2009-07-00</li>
<li><span style="color:#0000ff;">期刊等級</span>：SCI / EI </li>
<li><span style="color:#0000ff;">論文名稱(篇名)</span>：Effect of Nitrogen Incorporation in a Gd Cap Layer on the Reliability of Deep-Submicrometer Hf-Based High-k/Metal-Gate nMOSFETs</li>
<li><span style="color:#0000ff;">期刊名</span>：IEEE Electron Device Letters</li>
<li><span style="color:#0000ff;">卷數</span>：30</li>
<li><span style="color:#0000ff;">期數</span>：1</li>
<li><span style="color:#0000ff;">起頁</span>：781</li>
<li><span style="color:#0000ff;">迄頁</span>：783</li>
<li><span style="color:#0000ff;">總頁數</span>：3</li>
<li><span style="color:#0000ff;">作者中文名</span>：葉文冠</li>
<li><span style="color:#0000ff;">作者英文名</span>：Wen-Kuan Yeh</li>
<li><span style="color:#0000ff;">全部作者</span>：Chia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Chun-Yu Chen, Chien-Ting Lin, Che-Hua Hsu, Li-Wei Cheng, and Chien-Ming Lai</li>
<li><span style="color:#0000ff;">著作人數</span>：8</li>
<li><span style="color:#0000ff;">作者型態</span>：Corresponding Author</li>
<li><span style="color:#0000ff;">使用語言</span>：英文</li>