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Chiang Te-Kuang, ”Elliptical Nanowire FET: Modeling the Short-Channel Subthreshold Current Caused by Interface-trapped-Charge and Its Evaluation for Subthreshold Logic Gate” Superlattices and microstructures, Vol.6, No.4, pp.1083-1092, 2020.

  • 出版日期:2019-08-01
  • 期刊等級:SCI
  • 論文名稱(篇名):AElliptical Nanowire FET: Modeling the Short-Channel Subthreshold Current Caused by Interface-trapped-Charge and Its Evaluation for Subthreshold Logic Gate
  • 期刊名: Superlattices and microstructures
  • 卷數:6
  • 期數:4
  • 起頁:1083
  • 迄頁:1092
  • 作者中文名:江德光
  • 作者英文名:Te-Kung Chiang
  • 全部作者:Te-Kuang Chiang
  • 著作人數:1
  • 作者型態:Corresponding Author
  • 使用語言:英文
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