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Chiang Te-Kuang, ”Elliptical Nanowire FET: Modeling the Short-Channel Subthreshold Current Caused by Interface-trapped-Charge and Its Evaluation for Subthreshold Logic Gate” Superlattices and microstructures, Vol.6, No.4, pp.1083-1092, 2020.
Chiang Te-Kuang*(江德光), ”Nanosheet FET: A New Subthreshold Current Model Caused by Interface-Trapped-Charge and Its Application for Evaluation of Subthreshold Logic Gate” Microelectronics Journal, Vol.104, No.106, pp.104983-104992, 2020.
"A Two-dimensional Analytical Model for the Threshold Volatge and Potential Distribution of the Short-Channel Dual-Material Gate(DMG) AlGaAs/GaAs HFET" , Solid-State Electronics , 2010, (SCI)
"The improvement of dynamic characteristics of ultrasonic therapeutic transducers using fine-grain PZT-based piezoceramics. " , IEEE Trans. on Ultrasonics, Felloelectrics and Frequency Control , 56 , 1 , pp156-166 ,2009, (SCI)
"A New Two-dimensional Model for Asymmetrical Dual Gate Material Double-Gate (ADMDG) MOSFET’s" , Microelectronics Reliability , vol.49 , no.7 , pp693-698 ,2009, (SCI)
"A New Compact Subthreshold Behavior Model for Dual-Material Surrounding gate (DMSG) MOSFETs" , Solid-State Electronics , vol.53 , no.5 , pp490-496 ,2009, (SCI)
"The improvement of dynamic characteristics of ultrasonic therapeutic transducers using fine-grain PZT-based piezoceramics" , IEEE Trans. on Ultrasonics, Felloelectrics and Frequency Control , Vol. 56 , No. 1 , pp156-166 ,2009, (SCI)
"A New Two-dimensional Analytical Subthreshold Behavior Model for Short-channel Tri-material Gate-stack SOI MOSFET’s" , Microelectronics Reliability , vol.49 , no.2 , pp113-119 ,2009, (SCI)
"New Analytical Model for Short Channel Fully Depleted Dual Gate Material Silicon on Insulator Metal Semiconductor Field Effect Transistor" , Japanese Journal of Applied Physics , vo..47 , no.12 , pp8734-8748 ,2008, (SCI)
"A New Analytical Subthreshold Behavior Model for Single-Halo Dual-Material Gate Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistor" , Japanese Journal of Applied Physics , vol.47 , no.11 , pp8297-8304 ,2008, (SCI)
"A New Two-dimensional Analytical Model for short-channel Symmetrical Dual Material Double-gate MOSFET’s" , Japanese Journal of Applied Physics , vol.46 , no.6A , pp3283-3290 ,2007, (SCI)
"A New Threshold Voltage Model for Symmetrical Double-Gate MOSFET，s with High-K Gate Dielectrics" , Solid-State Electronics , vol.51 , no.3 , pp387-393 ,2007, (SCI)
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