"A New Scaling theory for fully-depleted SOI double-gate MOSFET’s: including effective conducting path effect (ECPE)" , Solid-State Electronics , vol.49 , no.3 , pp317-322 ,2005, (SCI)
出版日期：2005-03-00
期刊等級：SCI
論文名稱(篇名)： A New Scaling theory for fully-depleted SOI double-gate MOSFET’s: including effective conducting path effect (ECPE)
