"Impact of SOI thickness on device performance and gate oxide reliability of Ni fully Silicide metal-gate strained SOI MOSFET" , Microelectronic Engineering , 88 , 3 , pp228-234 ,2011, (SCI)
出版日期：2011-03-00
期刊等級：SCI
論文名稱(篇名)：Impact of SOI thickness on device performance and gate oxide reliability of Ni fully Silicide metal-gate strained SOI MOSFET
