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"Trap Induced Negative Differential Conductance and Back-Gated Charge Redistribution in AlGaN/GaN Power Devices" , Microelectronics Reliability , 102 , 113495 , pp89-93 ,2019, (SCI)
"Stacked Ge-Nanosheet GAAFETs Fabricated by Ge/Si Multilayer Epitaxy" , IEEE ELECTRON DEVICE LETTERS , 39 , 8 , pp1133-1136 ,2018, (SCI)
"The Impact of Fin Number on Device Performance and Reliability for Multi-Fin Tri-Gate n-and p-type FinFET" , IEEE Transaction on Device and Materials Reliability , 15 , 1 , pp1-2 ,2018, (SCI)
"Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping" , IEEE Transactions on Electron Devices , 64 , 5 , pp 2314- 2320 ,2017, (SCI)
"Performance Evaluation of UTBB FDSOI, FinFETs, and SOI FinFETs via Mechanical Stresses and Body Biasing" , IEEE Transactions on Nanotechnology , None , 99 , pp1-1 ,2017, (SCI)
"Multiple-valued logic design based on the multiple-peak BiCMOSNDR Circuits" , International Journal of Engineering Science and Technology , 19 , 2 , pp888-893 ,2016, (SCI)
"Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium" , IEEE ELECTRON DEVICE LETTERS , 37 , 2 , pp138-141 ,2016, (SCI)
"High Gamma Value 3D-Stackable HK/MG-Stacked Tri-Gate Nanowire Poly-Si FETs With Embedded Source/Drain and Back Gate Using Low Thermal Budget Green Nanosecond Laser Crystallization Technology"
"Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A Review" , IEEE Journal of the Electron Devices Society , 4 , 5 , pp286-293 ,2016, (SCI)
"The Observation of Width Quantization Impact on Device Performance and Reliability for High-k/Metal Tri-Gate FinFET" , IEEE Transaction on Device and Materials Reliability , 16 , 4 , pp610-616 ,2016, (SCI)
"Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium" , IEEE ELECTRON DEVICE LETTERS, , 37 , 11 , pp1379-1381, ,2016, (SCI)
"Influence of Fin Number on Hot-Carrier Injection Stress Induced Degradation in Bulk FinFETs" , Microelectronics Reliability , 67 , 1 , pp89-93 ,2016, (SCI)
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