"A novel short-channel model for threshold voltage of tri-gate MOSFETs with localized trapped charges" , IEEE Transactions on Device and Materials Reliability (TDMR) , vol. 12 , no. 2 , pp311-316 ,2012, (SCI)
出版日期：2012-06-00
期刊等級：SCI
論文名稱(篇名)：A novel short-channel model for threshold voltage of tri-gate MOSFETs with localized trapped charges
期刊名：IEEE Transactions on Device and Materials Reliability (TDMR)
卷數：vol. 12
期數：no.2
起頁：311
迄頁：316
總頁數：6
作者中文名：江德光
作者英文名：Te-Kung Chiang
全部作者：T.K. Chiang
著作人數：1
作者型態：First Author / Corresponding Author
