跳到主要內容區

 

” A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-gate MOSFETs”, Electronic Materials. 2024, 5(4), 321-330

T.K. Chiang,” A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-gate MOSFETs”, Electronic Materials. 2024, 5(4), 321-330; DOI: 10.3390/electronicmat5040020.
瀏覽數:
登入成功