” A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-gate MOSFETs”, Electronic Materials. 2024, 5(4), 321-330
T.K. Chiang,” A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-gate MOSFETs”, Electronic Materials. 2024, 5(4), 321-330; DOI: 10.3390/electronicmat5040020.
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