江德光/研討會

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A Novel Effective-Conducting-Path-Induced Scaling Length Model and Its Application for Assessing Short-Channel Performance of Multiple-Gate MOSFETs

A UNIFIED QUANTUM SCALING LENGTH MODEL FOR NANOMETER MULTIPLE-GATE MOSFETS

A Quasi-3D Subthreshold Behavior Model for Multiple-Gate MOSFETs

A New Short-Channel-Effect-Degraded Subthreshold Behavior Model for Elliptical Gate-All-Around MOSFET

A Quasi-3-D Subthreshold Current/Swing Model for Fully Depleted Quadruple-Gate (FDQG)MOSFETs

A Short-Channel-Effect-Degraded Noise Margin Model for Junctionless Quadruple-Gate MOSFETs Working on Low Power CMOS Logic Gates

A New Device-Physics-Based Average DC Power Model for Quadruple-Gate MOSFET Working on Low-Power CMOS Substhreshold Logic Gates

A New Quasi-3-D Subthrehold Behavior Model for Short-Channel Double-Fin Multi-Channel FETs (DFMcFETs)

A Novel Noise Margin Model of Surrounding-gate MOSFET Working on Subthreshold CMOS Logic Gates

A New Noise Margin and Average Static Power Model for Junctionless Double-gate FETs (JLDGFET) Working in Subthreshold Logic gate

A New Threshold Voltage Model for Short-Channel Junctionless Inverted T-Shaped Gate FETs (JLITFET)

A New Quasi-3D Subthreshold Current Model for Junctionless Tri-Gate (JLTG) MOSFETs with the Interface Trapped Charges

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