江德光/研討會

日期	標題
2025-04-01	” A novel Ballistic Model for the Subthreshold Current of nanosheet transistors”, The International Electron Devices and Materials Symposium, August, 19-21, 2024(IEDMS2024), Taichung, Taiwan.
2025-04-01	” A novel Ballistic Model for the Subthreshold Current of FinFET nanotransistors”, IEEE Silicon Nanoelectronics Workshop, June. 15-16, 2024(ISNM2024), Hondolulu
2025-04-01	” A novel Ballistic Threshold Voltage Model for Elliptical MOSFET”, The 4th symposium on nano-device circuit and technology, August, 19-21, 2024 (SNDCT2024),Taichung, Taiwan
2025-04-01	” A unified Ballistic Model for the Subthreshold Behavior of multiple-gate MOSFETs”, IEEE International Conference on Solid-State and Integrated Circuits Technology, Oct 22-25, 2022 (ICSICT2024). Zhuhai, China.
2024-02-17	A Novel Subthreshold Behavior Model for Nano-Sheet with Dual-Material Gate (DMG) and Hetero-Gate Dielectric (HGD)
2024-02-17	A New Interface Quasi-Fermi Potential Model for Dual-Material Graded-Channel (DMGC) GAA FET and Its Application for Calculating the Subthreshold Current
2024-02-17	A New Interface Quasi-Fermi Potential Model for Interface-Trapped-Charge GAA FET and Its Application to Examine the Degraded Noise Margin of Subthreshold Logic
2020-06-11	A Novel Effective-Conducting-Path-Induced Scaling Length Model and Its Application for Assessing Short-Channel Performance of Multiple-Gate MOSFETs
2020-06-11	A UNIFIED QUANTUM SCALING LENGTH MODEL FOR NANOMETER MULTIPLE-GATE MOSFETS
2020-06-11	A Quasi-3D Subthreshold Behavior Model for Multiple-Gate MOSFETs