"Effect of gate capping configurations and silicon-on-insulator thickness with external stresses on partially depleted metal-oxide-semiconductor field-effect transistors" , J. Vac. Sci. Technol. B , 29 , 1 , pp01A904-1-01A904-4 ,2011, (SCI)

出版日期：2011-01-00

期刊等級：SCI

論文名稱(篇名)：Effect of gate capping configurations and silicon-on-insulator thickness with external stresses on partially depleted metal-oxide-semiconductor field-effect transistors

期刊名：J. Vac. Sci. Technol. B

卷數：29

期數：1

起頁：01A904-1

迄頁：01A904-4

總頁數：5

作者中文名：葉文冠

作者英文名：Wen-Kuan Yeh

全部作者：Wen-Teng Chang, Jian-An Lin, Chih-Chung Wang, and Wen-Kuan Yeh

著作人數：4

作者型態：Corresponding Author / Other

使用語言：英文

瀏覽數:

友善列印