"The Impact of Oxide Traps Induced by SOI Thickness on Reliability of Fully Silicide Metal-Gate Strained SOI MOSFET" , IEEE Electron Device Letters , 31 , 2 , pp165-167 ,2010, (SCI),(EI)
出版日期：2010-02-00
期刊等級：SCI / EI
論文名稱(篇名)：The Impact of Oxide Traps Induced by SOI Thickness on Reliability of Fully Silicide Metal-Gate Strained SOI MOSFET
期刊名：IEEE Electron Device Letters
卷數：31
期數：2
起頁：165
迄頁：167
總頁數：3
作者中文名：葉文冠
作者英文名：Wen-Kuan Yeh
全部作者：Cheng-Li Lin, Yu-Ting Chen, Fon-Shan Huang, Wen-Kuan Yeh, and Chien-Ting Lin
