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"Nano-scaled Ge FinFETs with Low Temperature Ferroelectric HfZrOx on Specific Interfacial Layers Exhibiting 65% S.S. Reduction and Improved ION",2017 VLSI Symposia on VLSI Technology and Circuits,Japan,2017/06/06 (SCI)

  • 年度:2017
  • 論文類型:會議論文
  • 論文等級:SCI
  • 論文名稱(篇名):Nano-scaled Ge FinFETs with Low Temperature Ferroelectric HfZrOx on Specific Interfacial Layers Exhibiting 65% S.S. Reduction and Improved ION
  • 會議名稱:2017 VLSI Symposia on VLSI Technology and Circuits
  • 會議開始時間:2017-06-06
  • 會議結束時間:2017-06-06
  • 作者中文名:葉文冠
  • 作者英文名:Wen-Kuan Yeh
  • 全部作者:C.-J. Su, Y.-T. Tang, Y.-C. Tsou**,P.-J. Sung,F,-J. Hou, C.-j. Wang, S,-T.Chung, C.-Y. Hsieh, Y.-S. Yeh. F.-K. Hsueh,Wen-Kuan Yeh ...ect
  • 著作人數:27
  • 作者型態:Other
  • 會議地點:Japan
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