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"The impact of fin number on device's performance and reliability in tri-gate FinFETs",Electron Devices Technology and Manufacturing Conference (EDTM),Japan,2017/02/28-2017/03/02 (SCI)
"Effects of fin width on performance and reliability for N- and P-type FinFETs",BIT's 3 rd Annual World Congress of Smart Materials-2017,Thailand,2017/03/16-2017/03/18 (SCI)
"Effects of Annealing Temperatures on Ge HfZrOx MOS Capacitors",Symposium on Nano Device Technology (SNDT 2017),新竹奈米電子研究大樓 國際會議廳,2017/04/28
"Two Dimensional Hole Gas (2DHG) Germanium Junctionless P-FinFETs without Impurity Scattering Achieved by Modulation Doping in Channel",International Conference on Silicon Epitaxy and heterostructures,The University of Warwick, Coventry, UK
Two Dimensional Hole Gas (2DHG) Germanium Junctionless P-FinFETs without Impurity Scattering Achieved by Modulation Doping in Channel
"Nano-scaled Ge FinFETs with Low Temperature Ferroelectric HfZrOx on Specific Interfacial Layers Exhibiting 65% S.S. Reduction and Improved ION",2017 VLSI Symposia on VLSI Technology and Circuits,Japan,2017/06/06 (SCI)
"Achieving BEOL footprint-efficient and low cost monolithic 3D+ IoT chip using low thermal budget laser technology",SSDM 2017,Sendai International Center in Sendai, Japan,2017/09/19-2017/09/21 (其他)
"A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node",International Symposium on VLSI Technology and Circuits (VLSI Symposium),USA, (SCI)
"Device Characteristicsof Nano Scale Junctionless Accumulation Mode FET (JAM-FET) with Localized Anti-channel Doping",Solid-State Device and Materials,Japan, (SCI)
"Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications",IEEE International Electron Devices Meeting,USA, (SCI)
"Location-controlled-grainTechnique for Monolithic3DBEOL FinFETCircuits",IEEE International Electron Devices Meeting,USA, (SCI)
"Ultra-Low Power 3DNC-FinFET-based Monolithic 3D+-IC with Computing-in-Memory for Intelligent IoT Devices",IEEE International Electron Devices Meeting,USA, (SCI)
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