"A Novel Localized-Trapped-Charge-Induced Threshold Voltage Model for Double-Fin Multi-Channel FETs (DFMcFETs)" , IEEE Trans on Device and Material Reliability (TDMR) , 17 , 2 , pp291-297 ,2017, (SCI)
出版日期：2017-02-00
期刊等級：SCI
論文名稱(篇名)：A Novel Localized-Trapped-Charge-Induced Threshold Voltage Model for Double-Fin Multi-Channel FETs (DFMcFETs)
期刊名：IEEE Trans on Device and Material Reliability (TDMR)
卷數：17
期數：2
起頁：291
迄頁：297
總頁數：7
作者中文名：江德光
作者英文名：Te-Kung Chiang
全部作者：Hong-Wun Gao, Yeong-Her Wang and Te-Kuang Chiang
