"A Novel Quasi-3D Interface-Trapped-Charge-Degraded Threshold Voltage Model for Omega-Gate MOSFETs" , IEEE Transactions on Device and Materials Reliability , 15 , 1 , pp35-39 ,2014, (SCI)
出版日期：2014-11-00
期刊等級：SCI
論文名稱(篇名)：A Novel Quasi-3D Interface-Trapped-Charge-Degraded Threshold Voltage Model for Omega-Gate MOSFETs
期刊名：IEEE Transactions on Device and Materials Reliability
