"A Novel Quasi-3D Interface-Trapped-Charge-Induced Threshold Voltage Model for Quadruple-Gate MOSFETs, Including Equivalent Number of Gates (ENG)”, IEEE Trans. on Electron Devices (TED)" , TED , vol. 61 , no. 5 , pp1615-1618 ,2014, (SCI)
出版日期：2014-03-00
期刊等級：SCI
論文名稱(篇名)：A Novel Quasi-3D Interface-Trapped-Charge-Induced Threshold Voltage Model for Quadruple-Gate MOSFETs, Including Equivalent Number of Gates (ENG)”, IEEE Trans. on Electron Devices (TED)
期刊名：TED
卷數：vol. 61
期數：no. 5
起頁：1615
迄頁：1618
總頁數：4
作者中文名：江德光
作者英文名：Te-Kung Chiang
全部作者：Chiang Te-Kuang
著作人數：1
作者型態：First Author
