"A New Interface-Trapped-Charge-Degraded Subthreshold Current Model for Quadruple-Gate (QG) MOSFETs”, IEEE Trans. on Electron Devices (TED)" , TED , vol. 61 , no. 5 , pp1611-1614 ,2014, (SCI)
出版日期：2014-03-00
期刊等級：SCI
論文名稱(篇名)：A New Interface-Trapped-Charge-Degraded Subthreshold Current Model for Quadruple-Gate (QG) MOSFETs”, IEEE Trans. on Electron Devices (TED)
