"A Novel Scaling Theory for Fully Depleted, Multiple-Gate MOSFET, Including Effective Number of Gates (ENG)" , IEEE TRANSACTIONS ON ELECTRON DEVICES , vol. 61 , no. 2 , pp631-633 ,2014, (SCI)

出版日期：2014-01-00

期刊等級：SCI

論文名稱(篇名)：A Novel Scaling Theory for Fully Depleted, Multiple-Gate MOSFET, Including Effective Number of Gates (ENG)

期刊名：IEEE TRANSACTIONS ON ELECTRON DEVICES

卷數：vol. 61

期數：no.2

起頁：631

迄頁：633

總頁數：3

作者中文名：江德光

作者英文名：Te-Kung Chiang

全部作者：Chiang Te-Kuang

著作人數：1

作者型態：First Author / Corresponding Author

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