"The Analytical Compact Threshold Voltage Model for Surrounding-gate MOSFETs With Interface Trapped Charges" , IEEE Electron Device Letters , Vol. 31 , No. 8 , pp788-790 ,2010, (SCI)

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"The Analytical Compact Threshold Voltage Model for Surrounding-gate MOSFETs With Interface Trapped Charges" , IEEE Electron Device Letters , Vol. 31 , No. 8 , pp788-790 ,2010, (SCI)

出版日期：2010-08-00

期刊等級：SCI

論文名稱(篇名)：The Analytical Compact Threshold Voltage Model for Surrounding-gate MOSFETs With Interface Trapped Charges

期刊名：IEEE Electron Device Letters

卷數：vol. 31

期數：no.8

起頁：788

迄頁：790

總頁數：3

作者中文名：江德光

作者英文名：Te-Kung Chiang

全部作者：T.K. Chiang

著作人數：1

作者型態：First Author / Corresponding Author

使用語言：英文

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