"A Scaling theory for Fully-depleted, Surrounding-gate MOSFET’s: including effective conducting path effect" , Microelectronic Engineering , vol.77 , no.2 , pp175-183 ,2005, (SCI)

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"A Scaling theory for Fully-depleted, Surrounding-gate MOSFET’s: including effective conducting path effect" , Microelectronic Engineering , vol.77 , no.2 , pp175-183 ,2005, (SCI)

出版日期：2005-02-00

期刊等級：SCI

論文名稱(篇名)： A Scaling theory for Fully-depleted, Surrounding-gate MOSFET’s: including effective conducting path effect

期刊名：Microelectronic Engineering

卷數：vol.77

期數：no.2

起頁：175

迄頁：183

總頁數：9

作者中文名：江德光

作者英文名：Te-Kung Chiang

全部作者：T.K. Chiang

著作人數：1

作者型態：First Author / Corresponding Author

使用語言：英文

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