Chiang Te-Kuang*(江德光), ”Nanosheet FET: A New Subthreshold Current Model Caused by Interface-Trapped-Charge and Its Application for Evaluation of Subthreshold Logic Gate” Microelectronics Journal, Vol.104, No.106, pp.104983-104992, 2020.
出版日期：2019-08-01
期刊等級：SCI
論文名稱(篇名)：Nanosheet FET: A New Subthreshold Current Model Caused by Interface-Trapped-Charge and Its Application for Evaluation of Subthreshold Logic Gate
