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"Effects of Annealing Temperatures on Ge HfZrOx MOS Capacitors",Symposium on Nano Device Technology (SNDT 2017),新竹奈米電子研究大樓 國際會議廳,2017/04/28
"Effects of fin width on performance and reliability for N- and P-type FinFETs",BIT's 3 rd Annual World Congress of Smart Materials-2017,Thailand,2017/03/16-2017/03/18 (SCI)
"The impact of fin number on device's performance and reliability in tri-gate FinFETs",Electron Devices Technology and Manufacturing Conference (EDTM),Japan,2017/02/28-2017/03/02 (SCI)
"Effects of Fin Width on Performance and Reliability for N- and P-type FinFETs",IEEE Proceedings of EDSSC,Hong Kong,2016/08/03-2016/08/05 (SCI)
"a-SiGeC thin film photovoltaic enabled self-power monolithic 3D IC under indoor illumination",2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA),Ambassador Hotel Hsinchu,Taiwan,2016/04/25-2016/04/27
"Monolithic 3D IC Under Indoor Illumination",2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA),Ambassador Hotel Hsinchu,Taiwan,2016/04/25-2016/04/27
"The Investigation of Characteristic and Reliability for Multi-Fin p-Channel FinFET",International Electron Devices and Materials Symposia (IEDMS 2015),Tainan,2015/11/19-2015/11/20 (EI)
"The Study on Width Quantization impact on Device Performance and Reliability for high-k/metal Tri- Gate FinFET",IEEE Proceedings of EDSSC,Singapore,2015/06/01-2015/06/05 (SCI)
"Junction induced Variation and Reliability for Ultra-Thin-Body and Bulk Oxide CMOSFETs",IPFA 2014 FINAL PROGRAMME,Marina Bay Sands , SINGAPORE ,2014/06/30-2014/07/04 (SCI)
"Device Variability and Reliability Check for Ultra-Thin-Body and Bulk Oxide CMOSFETs",IEEE Proceedings of EDSSC, HongKong, China,2013/06/05 (SCI)
"Design and Application of Van Der Pol Oscillator Using NDR Circuit",IEEE 2nd International Symposium on Next-Generation Electronics (ISNE),Kaohsiung,2013/02/25-2013/02/26 (SCI)
"Impact of Doping Concentration on Device Characteristics and Reliability in Ultra-Thin-Body and BOX(UTBB) MOSFETs(傑出論文獎)",International Electron Devices and Materials Symposia (IEDMS),Kaohsiung , Taiwan,2012/11/29 (EI)
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